Constructing A Carrier Collection Framework at The Rear Interface in Cu2ZnSn(S, Se)4 Solar Cells by Selenizing an Inserted CuBi2O4 Nanolayer (2025)

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    ACS Applied Materials & Interfaces

    Cite this: ACS Appl. Mater. Interfaces 2025, XXXX, XXX, XXX-XXX

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    https://pubs.acs.org/doi/10.1021/acsami.4c14234

    Published April 29, 2025

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    Constructing A Carrier Collection Framework at The Rear Interface in Cu2ZnSn(S, Se)4 Solar Cells by Selenizing an Inserted CuBi2O4 Nanolayer (7)

    This work introduces the application of an ultrathin CuBi2O4 (CBO) nanolayer to improve the performance of Cu2ZnSn(S, Se)4 (CZTSSe) photovoltaic cells. The CBO layer is situated between molybdenum (Mo) and the CZTSSe absorber, which promotes the formation of a more compact absorber layer and larger CZTSSe grain sizes. Furthermore, the decomposition of the CBO layer during high-temperature annealing leads to the formation of Cu-doped bismuth selenide in the bottom region of the absorber. The Cu-doped bismuth selenide improves carrier transport and enhances the electrical properties at the rear interface of the CZTSSe device. These enhancements lead to notable improvements in all key photovoltaic parameters, thereby boosting the overall efficiency of the solar cell.

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    • Absorption
    • Interfaces
    • Layers
    • Solar cells
    • Thickness

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    ACS Applied Materials & Interfaces

    Cite this: ACS Appl. Mater. Interfaces 2025, XXXX, XXX, XXX-XXX

    Click to copy citationCitation copied!

    Published April 29, 2025

    Publication History

    • Received

    • Accepted

    • Revised

    • Published

      online

    © 2025 American Chemical Society

    Request reuse permissions

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